半导体器件失效机理分析：热载流子效应、负偏置温度不稳定性和辐射的影响

半导体器件可能面临多种失效机理，例如热载流子注入、栅氧化层经时击穿、负偏置温度不稳定性、辐射等等。每种失效机理对器件的影响程度各不相同。本文主要分析了热载流子注入 (HCI)、负偏置温度不稳定性 (NBTI)、辐射以及它们之间两种效应以及三种效应共同作用时对电路的影响。

There are various types of failure mechanisms that devices may experience, such as hot carrier injection, gate oxide breakdown over time, negative bias temperature instability, radiation, and more. Each failure mechanism has a different level of impact on the device. This paper primarily focuses on analyzing the effects of hot carrier injection (HCI), negative bias temperature instability (NBTI), radiation, and their combined effects on circuits.