半导体器件失效机理分析：热载流子效应、负偏置温度不稳定性、辐射及其复合影响

There are various types of failure mechanisms that devices may encounter, such as hot carrier injection, gate oxide breakdown over time, negative bias temperature instability, radiation, and more. Each failure mechanism has a different degree of impact on the device. The main focus of this paper is to analyze the effects of hot carrier injection (HCI), negative bias temperature instability (NBTI), radiation, and the combined effects of two or three of these mechanisms on circuits.