器件失效机理分析：热载流子效应、负偏置温度不稳定性和辐射的影响

There are various types of failure mechanisms that devices can be subjected to, such as hot carrier effects, gate oxide breakdown due to aging, negative bias temperature instability, radiation, and more. Each of these failure mechanisms has a different level of impact on the devices. The paper mainly analyzes the effects of hot carrier effects (HCI), negative bias temperature instability (NBTI), radiation, as well as the combined impact of two and three of these effects on the circuit.