请改写以下文字避免查重：图中300 cm-1 以左的峰为径向呼吸峰其与SWCNT薄膜的直径分布以及金属型与半导体型的比例有关。
The peak on the left of 300 cm-1 in the graph is referred to as the radial breathing peak, and its distribution in diameter with respect to the SWCNT film is related to the ratio of metallic and semiconducting types.
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