TFT 器件仿真优化：提升求解速度、实现迟滞现象模拟

Translation: Currently, the dd model is being used to simulate tft devices. The main requirements are I-V curves, hysteresis phenomena, solution speed, and solution stability.\n1. Attempts to add defect state models resulted in non-smooth Id-Vg curves with large jumps.\n2. The solution speed is too slow. For example, it takes two loops to solve the Id-Vg curve for Vd = -5V and Vg = -5V:\nfor(double Vd = 0; Vd > -5; Vd+=Vd_step){\n for(double Vg = 0; Vg > -5; Vg+=Vg_step){\n dd_simulator = set_initial_guess(...);\n ...\n }\n}\nThe previous calculation results are used as the initial values for the next step. Moreover, Vd_step and Vg_step can only be between 0 and 0.5 and cannot be too large. These settings result in slow solution speed, so a faster method is needed.\n3. What model should be used to simulate hysteresis phenomena?\n4. The Newton iteration in viennashe is only designed for she simulation. A Newton iteration algorithm or other iteration algorithms need to be added to the dd simulation.