TFT 器件仿真优化：提高 DD 模拟效率和精度

Translation: Currently, the dd simulation is being used to solve tft devices, with the main requirements being the I-V curve, hysteresis phenomenon, solution speed, and solution stability.\n1. Attempts have been made to add defect state models, but the Id-Vg curve is not smooth and has large jumps.\n2. The solution speed is too slow. For example, it takes two loops to solve the Id-Vg curve for Vd = -5V and Vg = -5V:\nfor(double Vd = 0; Vd > -5; Vd+=Vd_step){\n for(double Vg = 0; Vg > -5; Vg+=Vg_step){\n dd_simulator = set_initial_guess(...);\n ...\n }\n}\nThe previous calculation results are used as the initial values for the next step. Moreover, Vd_step and Vg_step can only be between 0 and 0.5 and cannot be too large. These settings result in slow solution speed, requiring a faster method.\n3. What model should be used to simulate the hysteresis phenomenon?\n4. The newton iteration in viennashe is only designed for she simulation. An iteration algorithm such as newton iteration or other iteration algorithms needs to be added to the dd simulation.