TFT 器件仿真优化：加速求解、模拟迟滞现象及改进迭代算法

Currently, the dd simulator is used to simulate TFT devices, with main requirements in I-V curves, hysteresis phenomena, solution speed, and solution stability.\n2. Attempts were made to add a defect state model, but the Id-Vg curve is not smooth and has large jumps.\n3. The solution speed is too slow. For example, it takes two loops to solve the Id-Vg curve for Vd = -5V and Vg = -5V. The code snippet looks like this:\n for(double Vd = 0; Vd > -5; Vd+=Vd_step){\n for(double Vg = 0; Vg > -5; Vg+=Vg_step){\n dd_simulator = set_initial_guess(...);\n ...\n }\n }\n The previous calculation results are used as the initial values for the next step. Moreover, Vd_step and Vg_step can only be between 0 and 0.5, and cannot be too large. These settings result in slow solution speed, and a faster method is needed.\n4. What model should be used to simulate hysteresis phenomena?\n5. The Newton iteration in viennashe is only designed for SHE simulation. It is necessary to add the Newton iteration algorithm or other iteration algorithms to the dd simulation.