2D Transition Metal Dichalcogenides Offer Superior Performance in Photodetector Fabrication Compared to Graphene and Black Phosphorus

The lack of a bandgap in graphene poses a significant obstacle in the development of photodetectors, leading to substantial dark currents. These large dark currents result in low photodetectivity and high power consumption, rendering graphene unsuitable for practical photodetector applications. Additionally, black phosphorus (BP) exhibits inherent instability, particularly when subjected to electrical currents, significantly reducing the device lifetime. This inherent instability restricts the long-term functionality of BP-based photodetectors. In contrast, 2D transition metal dichalcogenides (TMDs), such as MoS2, WSe2, and MoTe2, demonstrate superior performance in photodetector fabrication. TMDs possess greater material stability compared to BP, mitigating the challenges associated with device degradation. Furthermore, the dark current in TMD-based photodetectors can be effectively suppressed through the depletion of major carriers, leading to improved signal-to-noise ratios and enhanced photodetectivity. The inherent properties of TMDs make them highly promising materials for the development of high-performance, stable, and energy-efficient photodetectors.