PdSe2: A Promising Material for Optoelectronic Applications in the NIR and MIR

PdSe2 has recently emerged as a compelling candidate for optoelectronic applications operating in the Near-Infrared (NIR) and Mid-Infrared (MIR) spectral ranges. This material's remarkable air-stability and large bandgap tunability, spanning from 0.03 eV (bulk form) to approximately 1.3 eV (monolayer form), render it highly attractive for use in such devices. The tunable bandgap enables precise control over the material's optical properties, while its air-stability ensures long-term device performance. Furthermore, PdSe2 can be synthesized on a wafer-scale through a simple selenization process of pre-deposited Pd film. Alternatively, centimeter-scale growth can be achieved using chemical vapor deposition methods. These scalable synthesis methods facilitate the fabrication of device arrays, paving the way for practical applications in optoelectronics.