The schematic configuration of the FLG-Si-FLG heterostructure waveguide photodetector is illustrated in Figure 1a. The FLG is divided into two segments with a gap between them, where the gap width is chosen as wgap = 300 nm in the present design. The FLG segments are positioned symmetrically over the silicon photonic waveguide, forming an FLG-Si-FLG structure. To achieve low contact resistance, the FLG segments are connected to corresponding metal electrodes using metal-graphene-metal sandwiched contact structures. This configuration effectively reduces the contact resistance, enhancing the overall performance of the photodetector.

FLG-Si-FLG Heterostructure Waveguide Photodetector with Reduced Contact Resistance

原文地址: https://www.cveoy.top/t/topic/oMr2 著作权归作者所有。请勿转载和采集!

免费AI点我,无需注册和登录