High-Performance Graphene Charge-Injection Photodetector with Enhanced Sensitivity and Broadband Imaging

A recent study by Liu et al. presented a novel graphene-based charge-injection photodetector (PD) that integrates the charge accumulation capability of the charge-coupled device (CCD) with the independent pixel structure of complementary metal-oxide-semiconductor (CMOS) technology. This innovative design resulted in a PD exhibiting exceptional performance characteristics. Notably, the graphene PD demonstrated high sensitivity exceeding 0.1 A/W in the infrared region, enabling efficient light detection. Furthermore, it exhibited fast response times, allowing for rapid signal acquisition. The PD also displayed broadband imaging capabilities, spanning from ultraviolet to mid-infrared wavelengths, making it versatile for various applications. Additional advantages include high linearity, high fill factor, low noise levels, and cost-effectiveness. These remarkable features highlight the potential of graphene-based PDs as a promising alternative for advanced optoelectronic applications.