器件模型参数设置与校准：优化模拟精度

完成了对器件模型结构上的设置，下一步就是把较为'隐蔽'的参数确定以及修正。 首先在器件结构定义中，对每块区域都指定了一个具体的材料名称，如果对使用的材料不 加修改那么在随后的数值计算中将会代入软件预置的参数进行计算。随着科学技术的进步， 提取到的材料参数的精度以及准确性会有所增加，同时部分材料参数在某些的特定情况下 有较大的差别。因此在器件结构中出现的材料，尤其是半导体材料，需要仔细根据研究内 容校准包括禁带宽度、载流子迁移率、介电常数以及载流子寿命等在内的参数。此外，当 电极的接触类型为肖特基接触时，还需要给出肖特基接触金属的功函数，以便在随后的仿 真计算中能够将肖特基势垒高度考虑进去。

After completing the structural setup of the device model, the next step is to determine and adjust the more 'hidden' parameters. Firstly, in the definition of the device structure, each region is assigned a specific material name. If the materials used are not modified, the software's preset parameters will be used for subsequent numerical calculations. With advances in science and technology, the accuracy and precision of extracted material parameters have increased, and some material parameters may vary significantly under specific conditions. Therefore, the materials used in the device structure, especially semiconductor materials, need to be carefully calibrated based on research content, including parameters such as bandgap width, carrier mobility, dielectric constant, and carrier lifetime. Additionally, when the electrode contact type is a Schottky contact, the work function of the Schottky contact metal must be provided to consider the height of the Schottky barrier in subsequent simulation calculations.