Enhancing Amorphous Wire Sensors: Tension-Stress Annealing for Optimized Giant Magneto-Impedance (GMI) Effect

Recently, there has been increasing research on amorphous wire sensors based on the driven giant magneto-impedance (LD-GMI) effect, and the development of high-performance sensors has led to higher expectations and requirements for amorphous wires. To meet these demands, we conducted tension-stress annealing (TSA) on bent amorphous wires to straighten them and studied the effects of tension annealing on the mechanical properties, magnetic properties, and GMI effects of the wires. Our research revealed that tension annealing induced large transverse anisotropic fields, which altered the magnetic domain structure, magnetization behavior, and GMI effect of the amorphous wires. By establishing the correlation between these factors, we can optimize the GMI effect by adjusting the magnetic properties.