Tension-Stress Annealing for Enhanced Giant Magneto-Impedance (GMI) in Amorphous Wires

Amorphous wire sensors based on the driven giant magneto-impedance (LD-GMI) effect have received increasing attention from researchers. The development of high-performance sensors has led to higher expectations and requirements for amorphous wires. To meet these demands, we investigated the effects of tension-stress annealing (TSA) on the mechanical properties, magnetic properties, and GMI effects of amorphous wires. Specifically, we straightened bent amorphous wires through TSA and observed the induction of large transverse anisotropic fields that altered the magnetic domain structure, magnetization behavior, and GMI effect of the wires. Through our research, we established a correlation between the magnetic domain structure, magnetization behavior, and GMI effect, which can be used to optimize the GMI effect by adjusting the magnetic properties.