Improving Amorphous Wire Sensors: Tension-Stress Annealing for Enhanced Giant Magneto-Impedance (LD-GMI)

Recently, researchers have been studying amorphous wire sensors based on the driven giant magneto-impedance (LD-GMI) effect. The development of high-performance sensors has led to higher expectations and requirements for amorphous wires. To meet these demands, we have used tension-stress annealing (TSA) to straighten the bent amorphous wires and discussed its effects on the mechanical and magnetic properties, as well as the GMI effect. We found that TSA induced large transverse anisotropic fields, which changed the magnetic domain structure and altered the magnetization behavior and GMI effect of the amorphous wires. By establishing the correlation between these factors, we can optimize the GMI effect by adjusting the magnetic properties.