DRAM vs. SRAM: Key Differences & 2-Part Address Reception Explained

DRAM (Dynamic Random Access Memory) and SRAM (Static Random Access Memory) are common memory types in computers. Their key differences lie in:

1. 'Storage Method': DRAM stores data using capacitors, while SRAM uses circuit elements.
2. 'Speed': SRAM is faster than DRAM as it doesn't require capacitor refresh.
3. 'Density': DRAM has higher density than SRAM because it requires fewer components to store a bit.

Regarding why DRAM chips typically receive addresses in two parts:

1. 'DRAM Refresh': DRAM relies on capacitors to store data, which necessitates periodic refresh operations to prevent data loss due to capacitor charge leakage. The DRAM controller issues refresh commands to ensure data integrity.
2. 'Time-Division Access': DRAM chips are usually divided into rows and columns to increase storage capacity. Accessing a specific DRAM cell involves first selecting the row, then the column. This two-step process requires the DRAM controller to receive the address in two clock cycles, one for the row and one for the column.