Fabrication and Characterization of Nanowire Field-Effect Transistors (FETs) for Nanoelectronics

The source and drain electrodes were fabricated by sputtering of titanium and gold, and the gate electrode was fabricated by EBL.

Using these FETs, the electrical characteristics of the nanowires were investigated.

The results showed that the nanowires had good electrical properties, with good source-drain current and on-off current ratio.

The FETs also showed good switchability, with the on-off current ratios ranging from 10 to 100.

These results demonstrate that the nanowires can be used as the basic building blocks for nanoelectronic devices, such as transistors, logic gates and memory cells.