SiO2/Si Substrate with 285 nm Back Gate Used in Sample Testing
Sample Testing Process
During the testing process of the sample, a SiO2/Si substrate with a back gate of 285 nm was used.
原文地址: https://www.cveoy.top/t/topic/lnaZ 著作权归作者所有。请勿转载和采集!
- 上一篇: 222 数字含义：幸运、时间或随机？
- 下一篇: 220V触电：如何自救？