NBTI 寿命评估研究：0.13μm PMOS 器件工作寿命分析

We designed NBTI test structures of different sizes and provided a detailed description of the circuit design, simulation verification, layout implementation, and NBTI stress testing process. We analyzed the device's characteristic curves and key degradation parameters through experimentation and testing. We also analyzed the impact of NBT stress and device feature size reduction on NBTI effects. In the experiment, we used the degradation amount of threshold voltage (ΔVth) as the life evaluation standard and considered the degree of influence of temperature, gate voltage, device channel length, and channel width on life. We established a life evaluation formula that only considers NBTI effects for 0.13μm. We compared the values of the life formula model with experimental test values, verifying the accuracy and precision of the life model formula. We calculated that the PMOS device's working life is approximately 7 years at Vgs=-1.2V and T=125℃.