Singly Doped Ho:YAG for High Power 2.09μm Lasers: Efficient Pumping with GaSb Diodes
Singly doped Ho:YAG is a highly desirable material for producing high power 2.09μm lasers due to its strong absorption band at 1.9μm, which can be directly pumped by GaSb-based laser diodes. This material is highly preferred for generating high power 2.09μm laser, as it has a dominant absorption band at 1.9μm that can be efficiently pumped by GaSb-based laser diodes.
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