翻译：目前使用dd模拟去求解tft器件需求主要是I-V曲线、迟滞现象、求解速度和求解稳定性。1 尝试添加了缺陷态模型但Id-Vg曲线不光滑、有较大的跳跃。2 求解速度太慢。例如求解Vd=-5VVg=-5V的Id-Vg曲线需要两个循环fordouble Vd = 0; Vd -5; Vd+=Vd_step fordouble Vg = 0; Vg -5; Vg+=Vg_step dd_s

Translation: Currently, the dd model is being used to simulate tft devices. The main requirements are I-V curves, hysteresis phenomena, solution speed, and solution stability.

1. Attempts to add defect state models resulted in non-smooth Id-Vg curves with large jumps.
2. The solution speed is too slow. For example, it takes two loops to solve the Id-Vg curve for Vd = -5V and Vg = -5V: for(double Vd = 0; Vd > -5; Vd+=Vd_step){ for(double Vg = 0; Vg > -5; Vg+=Vg_step){ dd_simulator = set_initial_guess(...); ... } } The previous calculation results are used as the initial values for the next step. Moreover, Vd_step and Vg_step can only be between 0 and 0.5 and cannot be too large. These settings result in slow solution speed, so a faster method is needed.
3. What model should be used to simulate hysteresis phenomena?
4. The Newton iteration in viennashe is only designed for she simulation. A Newton iteration algorithm or other iteration algorithms need to be added to the dd simulation