翻译：目前使用dd模拟去求解tft器件需求主要在I-V曲线、迟滞现象、求解速度和求解稳定性。1 尝试添加了缺陷态模型但Id-Vg曲线不光滑、有较大的跳跃。2 求解速度太慢。例如求解Vd=-5VVg=-5V的Id-Vg曲线需要两个循环fordouble Vd = 0; Vd -5; Vd+=Vd_step fordouble Vg = 0; Vg -5; Vg+=Vg_step dd_s
- Currently, the dd simulator is used to simulate TFT devices, with main requirements in I-V curves, hysteresis phenomena, solution speed, and solution stability.
- Attempts were made to add a defect state model, but the Id-Vg curve is not smooth and has large jumps.
- The solution speed is too slow. For example, it takes two loops to solve the Id-Vg curve for Vd = -5V and Vg = -5V. The code snippet looks like this: for(double Vd = 0; Vd > -5; Vd+=Vd_step){ for(double Vg = 0; Vg > -5; Vg+=Vg_step){ dd_simulator = set_initial_guess(...); ... } } The previous calculation results are used as the initial values for the next step. Moreover, Vd_step and Vg_step can only be between 0 and 0.5, and cannot be too large. These settings result in slow solution speed, and a faster method is needed.
- What model should be used to simulate hysteresis phenomena?
- The Newton iteration in viennashe is only designed for SHE simulation. It is necessary to add the Newton iteration algorithm or other iteration algorithms to the dd simulation
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