The nonlinear properties of gallium nitride GaN hold great promise for modulation through various means Researchers have indicated that the nonlinear absorption properties of GaN crystals can be chang

The nonlinear characteristics of gallium nitride (GaN) offer promising possibilities for modulation through different methods. Researchers have suggested that the nonlinear absorption properties of GaN crystals can be modified by introducing iron and magnesium doping. Furthermore, relevant studies have shown that the properties of nanowires can be changed by defects, pore size, and other factors. Investigating the impact of various factors on the nonlinear properties of gallium nitride nanowires is of significant importance, highlighting the considerable potential of gallium nitride nanowires as a material for nonlinear absorption.