非线性光学效应方面GaN块状晶体与薄膜材料已经得到一定的研究。2001 年立陶宛的 Pačebutas小组利用 527 nm 入射激光下的皮秒Z扫描实验对GaN 体晶体进行了研究 23。通过泵浦探测与开孔 Z 扫描测量得到GaN中除了双光子吸收效应外还存在自由载流子吸收。他们测得的双光子吸收系数为 17 ~ 20 cmGW。美国Taheri课题组在532 nm 处采用简并四波混频首次在实验测量得到

Considerable research has been conducted on the nonlinear optical properties of GaN bulk crystals and thin film materials. In 2001, the Pačebutas group from Lithuania studied GaN bulk crystals using picosecond Z-scan experiments with a 527 nm laser [23]. Pump-probe and open-aperture Z-scan measurements revealed the presence of both two-photon absorption and free carrier absorption in GaN. The measured two-photon absorption coefficient was found to be in the range of 17 to 20 cm/GW. In a pioneering study, the Taheri research group from the United States measured the third-order nonlinear refractive index of GaN epitaxial thin films for the first time at 532 nm using degenerate four-wave mixing [24]. The obtained value was 1×10-12 cm2/W, indicating significant nonlinear optical effects. However, there is limited literature on the nonlinear optical absorption properties of GaN-based nanomaterials. Due to their nanoscale structure, quantum confinement effects greatly influence the band distribution of the material, leading to changes in the recovery process of photo-generated carriers and subsequently affecting their nonlinear optical properties.