The future research of silicon photonic integrated detector based on two-dimensional materials can focus on the following aspects 1 Fabrication of large-scale two-dimensional material silicon photonic

Future research in the field of silicon photonic integrated detectors based on two-dimensional materials can be focused on several key aspects. Firstly, there is a need to develop methods for the fabrication of large-scale two-dimensional material silicon photonic integrated devices. Currently, the preparation of two-dimensional materials for use in integrated photodetectors with silicon photonic structures is largely reliant on mechanical stripping methods. To enable the widespread use of two-dimensional materials in the production of large-scale silicon photonic integrated devices, researchers must explore alternative approaches such as the growth of two-dimensional materials or the production of two-dimensional material heterojunctions.

Secondly, emerging two-dimensional materials such as MXene, indium selenide, graphene, and perovskite nanosheets show great promise for integration with silicon photons. These materials demonstrate excellent characteristics such as an appropriate band gap, high photoelectric conversion efficiency at high power, and large mobility. Researchers should focus on exploring the application of these new materials to the field of silicon photonic integrated photoelectric detection.

Finally, research should also focus on optimizing device interface and contact resistance. For example, the large dark current of graphene detectors can be mitigated by combining graphene with other two-dimensional materials, such as the vertical stacking of transition metal dichalcogenides to form a van der Waals heterojunction.

Overall, further research in these areas will contribute significantly to the development of efficient and cost-effective silicon photonic integrated detectors based on two-dimensional materials, ultimately enabling their commercialization and widespread use in various applications