we proposed and demonstrated waveguide-integrated PdSe2 photodetectors operating in the telecom optical bands ranging from the O-band to the C-band The significant optoelectronic properties of multila

In this study, we proposed and demonstrated the use of waveguide-integrated PdSe2 photodetectors in the telecom optical bands, specifically in the O-band to the C-band range. We characterized the optoelectronic properties of multilayer PdSe2, including anisotropy and ultrafast carrier dynamics. We integrated silicon-on-insulator (SOI) ridge waveguides with the multilayer PdSe2, which were exfoliated from bulk materials and transferred by an imprint-transfer process. These devices are capable of providing sufficient optical absorption for the fundamental mode of TE polarization (TE0). Our PdSe2 waveguide-integrated photodetectors exhibited a broadband spectral operation, high responsivity of 1758.7 mA·W–1, and low noise-equivalent power (NEP) of 4.0 pW·Hz–0.5 at 1550 nm (5 V). Furthermore, the 3-dB bandwidth reached up to 1.5 GHz, and the eye diagram indicated that the PdSe2 photodetector could achieve a data transmission rate exceeding 2.5 Gbit·s–1