we propose a waveguide-integrated 2D material photodetector operating with the photovoltaic mechanism provided by a p–i–n homojunction made from a few-layer MoTe2 which enables ultralow dark current h

In this study, we suggest a novel approach for a photodetector utilizing a p-i-n homojunction made from a few-layer MoTe2 integrated into a waveguide. The photovoltaic mechanism of the device allows for low dark current, high responsivity, and fast response speed. The use of 2D materials in this design offers a unique advantage, as they can be easily electron- or hole-doped through the application of an electrostatic field, which is not feasible in bulk semiconductors. Overall, our proposed photodetector presents a promising solution for efficient and reliable optical detection