In Fig 3k Huang et al reported waveguide-integrated BP PDs operating at 368–403 μm in which the PG effect plays a major role and results in high-gain photoresponses68 When operating at a bias of 1 V t
In their study, Huang et al. presented waveguide-integrated black phosphorus (BP) photodetectors (PDs) that operate within the wavelength range of 3.68–4.03 μm. These PDs utilize the photogalvanic (PG) effect, which is the predominant mechanism for generating high-gain photoresponses. Specifically, at a bias of 1 V, the BP PDs exhibit responsivities of 23 A W−1 and 2 A W−1 for 3.68 μm and 4 μm respectively. Additionally, the noise equivalent power (NEP) was determined to be between ~ 0.01–1 nW Hz−1/2 at room temperature
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