a Si WG-multilayer BP films integrated photodetector was reported by Youngblood et al241 This device exhibited excellent photoresponsivities of 135 and 657 mA W−1 at room temperature with a wide bandw

Youngblood et al. have reported on the development of a Si WG-multilayer BP films integrated photodetector. This device has demonstrated exceptional photoresponsivities of 135 and 657 mA W−1 at ambient temperature, along with a broad bandwidth of >3 GHz at 1.55 μm, as determined by the PV effect. The integration of Si and BP layers has resulted in a highly efficient photodetector system with enhanced performance characteristics that are well-suited for a range of applications.