The first BP photodetector was reported by Buscema et al in 2014 with the main structure consisting of a few-layer BP 3–8 nm thick based FET240 which demonstrated a responsivity of 48 mA W−1 over a br

In 2014, Buscema et al. reported the initial development of a BP photodetector, composed primarily of a FET based on a few-layer BP structure (with a thickness of 3-8 nm). The device exhibited a responsivity of 4.8 mA W^-1 across a wide range of wavelengths, as well as a rapid rise time of approximately 1 ms and a fall time of approximately 4 ms.