深亚微米MOS器件可靠性分析：NBTI和HCI效应的影响

随着微电子技术的不断发展，集成电路器件已经成为现代电子技术中不可或缺的主要组成部分，其可靠性直接关系到电子设备的稳定性和使用寿命。在器件尺寸不断缩小的必然趋势下，MOS器件的可靠性要求也越来越高。深亚微米尺寸MOS器件的可靠性问题主要包括负偏置温度不稳定性效应，热载流子注入效应，栅氧化层经时击穿效应等。随着集成电路集成度的提高，器件尺寸的不断缩小，这些以前被人们忽略的效应被重新重视起来。其中NBTI效应和HCI效应的研究是提高器件可靠性的重要研究方向，对它们进行深入研究具有重要意义。

本文叙述了近些年来半导体行业的快速发展和发展过程中遇到的可靠性问题，并简单分析了引起MOS器件可靠性问题的各种失效机制。分别对负偏置温度不稳定性效应和热载流子注入效应的产生机理进行了总结说明，介绍了负偏置温度不稳定性效应的三种模型和热载流子注入效应的分析模型。

基于收集分析的模型数据和物理参数，通过Sentaurus TCAD仿真软件，使用sde模块和sdevice模块分别对MOS管和失效机制进行建模仿真。对NBTI效应和HCI效应分别进行了仿真研究，分析不同应力条件下MOS管的转移特性曲线和阈值电压的变化，之后进行两种效应的混合仿真。研究结果表明，MOS器件在两种电压应力下，NBTI效应和HCI效应会导致器件阈值电压漂移，且电压应力越大，漂移值越高。单独NBTI和混合失效同在电压应力为1.2V条件下，在1000s的应力时间下，前者导致器件阈值电压退化7.42%，后者导致阈值电压退化9.70%，这说明了MOS器件阈值电压在两种效应叠加下会使器件阈值电压受到的影响进一步加重，降低器件的可靠性。

With the continuous development of microelectronics technology, integrated circuit devices have become an indispensable part of modern electronic technology, and their reliability is directly related to the stability and service life of electronic equipment. Under the inevitable trend of device size reduction, the reliability requirements of MOS devices are also increasing. The reliability issues of deep submicron MOS devices mainly include negative bias temperature instability (NBTI) effect, hot carrier injection (HCI) effect, and gate oxide breakdown effect. With the increase of integration level and the continuous reduction of device size, these effects that were previously ignored have been revalued. Among them, the research on NBTI and HCI effects is an important research direction to improve device reliability, and in-depth research on them is of great significance.

This article describes the rapid development of the semiconductor industry in recent years and the reliability issues encountered in the development process, and briefly analyzes various failure mechanisms that cause MOS device reliability issues. The mechanism of the generation of NBTI and HCI effects is summarized and explained, and three models of negative bias temperature instability effect and an analysis model of hot carrier injection effect are introduced.

Based on the collected model data and physical parameters, the Sentaurus TCAD simulation software is used to model and simulate MOS tubes and failure mechanisms using the sde module and sdevice module, respectively. NBTI and HCI effects are studied separately, and the transfer characteristic curve and threshold voltage of MOS tubes under different stress conditions are analyzed, followed by a mixed simulation of the two effects. The research results show that under two voltage stresses, NBTI and HCI effects will cause the threshold voltage of the device to drift, and the higher the voltage stress, the higher the drift value. Under a voltage stress of 1.2V and a stress time of 1000s, NBTI alone and mixed failure will cause the threshold voltage of the device to degrade by 7.42% and 9.70%, respectively, which indicates that the threshold voltage of MOS devices will be further affected under the superposition of the two effects, reducing the reliability of the device.