Sentaurus 中 NBTI 效应的 Sdevice 建模代码示例
Define the material parameters for the oxide and the silicon
define mat_oxide permittivity = 3.9 thickness = 10e-9 end
define mat_silicon permittivity = 11.7 doping = 1e16 end
Define the device structure
structure oxide thickness = mat_oxide.thickness silicon thickness = 50e-9 oxide doping = 0 silicon doping = mat_silicon.doping end
Define the simulation conditions
simulate time step = 10e-6 total time = 1000 temperature = 300 end
Define the NBTI model
model nbtimodel
Define the parameters for the model
define a = 1.0e-3 define b = 1.0e-4 define c = 1.0e-5 define d = 1.0e-6
Define the equations for the model
define k1 = a * exp(-b / (kb * temperature)) define k2 = c * exp(-d / (kb * temperature)) define k3 = 1.0e-3 define k4 = 1.0e-4
Define the NBTI reaction
reaction nbtireaction species O2 SiO2 H2O H Si reaction rate = k1 * O2 * Si - k2 * SiO2 * H2O reaction rate = k3 * H * SiO2 - k4 * H2O * Si end end end
Define the device simulation
device
Define the oxide and silicon materials
material oxide = mat_oxide material silicon = mat_silicon
Define the NBTI model for the silicon
model nbtimodel material silicon reaction nbtireaction end
Define the initial conditions for the simulation
initial conditions oxide.voltage = 0 silicon.voltage = 0 oxide.charge = 0 silicon.charge = 0 end
Define the output for the simulation
output oxide.voltage silicon.voltage oxide.charge silicon.charge end end
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