Sentaurus 中 NBTI 效应建模代码示例

以下是 Sentaurus 中 NBTI 效应的建模代码示例：

定义材料参数

material SiO2
  permittivity = 3.9
  'interface state density' = 1.0e12 / cm^2 / eV
  'trap time constant' = 1.0e-8 s
end

material Si
  'electron affinity' = 4.05 eV
  density = 2.33 g/cm^3
  permittivity = 11.7
  bandgap = 1.12 eV
  mobility = 1430 cm^2 / V / s
  'trap density' = 1.0e12 / cm^3 / eV
  'trap time constant' = 1.0e-8 s
end

定义设备结构

device nmos
  material gate = poly
  'thickness gate' = 0.05 um
  'workfunction gate' = 4.1 eV
  material oxide = SiO2
  'thickness oxide' = 0.01 um
  material channel = Si
  'length channel' = 0.5 um
  'width channel' = 50 um
  'doping channel' = 1.0e17 / cm^3
  temperature = 300 K
end

定义 NBTI 效应模型

model nbti
  temperature = 300 K
  time = 0
  'stress time' = 1000 h
  'recovery time' = 2000 h
  'activation energy' = 0.8 eV
  'pre-exponential factor' = 1.0e-4 / s
  'threshold voltage shift' = 0.1 V
end

设备模拟

simulate nmos
  solve equilibrium
  solve nbti
  solve transient
  output iv
end

以上代码仅为示例，用户可以根据具体的应用需求进行调整和修改。