关于巨磁阻效应在电脑硬盘磁存储请推荐5篇引用率较高的英文文献并 介绍
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"Giant Magnetoresistance in Magnetic Multilayered Nanowires" by Albert Fert and Peter Grünberg (1995) - This paper is considered a landmark in the field of giant magnetoresistance (GMR) and was awarded the Nobel Prize in Physics in 2007. It describes the discovery and characterization of GMR in multilayered magnetic nanowires, which revolutionized the field of magnetic data storage.
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"Giant Magnetoresistance of (001)Fe/(001)Cr Magnetic Superlattices" by Michel N. Baibich et al. (1988) - This paper reports the first observation of GMR in magnetic superlattices, which consist of alternating layers of magnetic and non-magnetic materials. The authors found that the resistance of the superlattice varied significantly with the orientation of the magnetic fields, which suggested the potential application of GMR in magnetic sensors.
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"Giant Magnetoresistance in Thin Film Magnetic Heterostructures" by Stuart S.P. Parkin et al. (1990) - This paper describes the development of GMR in thin film magnetic heterostructures, which are composed of two or more layers of magnetic and non-magnetic materials. The authors found that GMR was greatly enhanced in these structures compared to multilayered nanowires, leading to potential applications in high-density data storage.
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"Spin-Dependent Tunneling into Magnetic Semiconductors" by Jairo Sinova et al. (2004) - This paper describes the discovery of tunnel magnetoresistance (TMR), a related phenomenon to GMR, in magnetic semiconductors. The authors found that TMR could be significantly enhanced by controlling the spin polarization of the semiconductor, which could lead to the development of novel spintronic devices.
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"Giant Magnetoresistance in Magnetic Tunnel Junctions" by M. Jullière (1975) - This paper describes the discovery of GMR in magnetic tunnel junctions, which are composed of two magnetic electrodes separated by a thin insulating layer. The author found that the resistance of the junctions varied significantly with the relative orientation of the magnetic fields, which suggested the potential application of GMR in magnetic memory devices
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