翻译From 2 it is seen that increase of interface trapcharge density Qit leads to an increase of the thresholdvoltage In Fig 4 the normalized variation of threshold voltage with stress time is shown for

从（2）中可以看出，界面陷阱电荷密度Qit的增加会导致阈值电压的增加。在图4中，显示了阈值电压随应力时间的归一化变化，对于一个门电压Vg = 0.7 V和应力条件下的几个漏电压Vds值。从图4中的图表可以观察到，阈值电压随着应力时间t的变化遵循幂律形式。

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