翻译It was also mentioned that another effect of the damage due to hot carriers is a drop of mobility of electronsin the inversion layer after stress 1617 This is becausewith the increase of interface t

还提到，由于热载流子损伤的影响，应力后反转层电子的迁移率也会下降[16,17]。这是因为随着应力下界面陷阱密度的增加，陷阱中的电荷也会增加，并通过库仑散射影响通道载流子的迁移率。迁移率下降和阈值电压增加会导致器件漏极电流降低。图5显示了单个NMOSFET在不同应力条件下多个栅极电压下的典型测量Id-Vds曲线。图6展示了不同级别的热载流子应力下漏极电流随应力时间的归一化变化。可以看出，与阈值电压类似，漏极电流随应力时间的归一化变化也遵循幂律：