翻译To better evaluate the effect of the NBTI through simulations the IDS × VGS curves for devices with different lengths biased at VDS = -005 V were simulated in order to determine the reference thresh

为了更好地通过模拟评估NBTI的影响，对不同长度的器件进行了偏置为VDS = -0.05 V的IDS×VGS曲线模拟，以确定器件的参考阈值电压，即在NBTI退化之前。从图5中显示IDS×VGS曲线行为的曲线中观察到，通过减小器件的通道长度，器件的VTH（绝对值）会减小。这种行为与短通道效应的增加影响有关，与NBTI效应无关。图5还呈现了具有类似物理特性的器件的实验IDS×VGS曲线，证明其与测量结果相符。