改写2019年 K．Yadav在Nature上报道的文章从微观角度解释负电容效应通过电子显微镜在铁电层．顺电介质串联结构中观测到了铁电极子在稳定的负电容状态下以漩涡流状分布直接论证了稳定状态下的负电容。2019年南洋理工大学的Xiaowei Wang在Nature上报道了范德华负电容场效应晶体管其栅极结构采用CulIlP2S6范德华异质结构在源漏电流7个数量级内实现了28 mV／decade的SS

In 2019, K. Yadav published an article in Nature that explained the negative capacitance effect from a micro perspective. Using electron microscopy, the article observed the ferroelectric subdomains in a series of ferroelectric and dielectric layers, demonstrating the stable negative capacitance state. Similarly, Xiaowei Wang from Nanyang Technological University reported a van der Waals negative capacitance field-effect transistor in Nature. The gate structure of this transistor used a CulIlP2S6 van der Waals heterostructure, achieving a sub-threshold slope of 28 mV/decade within seven orders of magnitude of the source-drain current. The hysteresis of the NCFET was negligible at a CulnP2S6 thickness of 20 nm. Furthermore, Xiaowei Wang applied the vdW-NCFET to an inverter, achieving a voltage gain of up to 24 times. The flexible vdW-NCFET with a bending radius of 3.8 mm demonstrated transfer characteristics with sub-threshold slopes below 60 mV/decade, displaying the vast potential of vdW-NCFET in ultra-low power consumption and flexible devices