Gallium Nitride Nanowires: A Promising Material for Q-Switching Devices in Ultraviolet Lasers

The research findings indicate that gallium nitride materials possess saturable absorption properties across a broad range of wavelengths, specifically in the ultraviolet and visible light regions. It can be inferred that GaN nanowires, with their wide bandgap, can be easily stimulated by single-photon absorption from a 355 nm laser and excited-state absorption from a 532 nm laser. This makes GaN nanowires a promising candidate for the development of Q-switching devices for frequency-doubled lasers and ultraviolet lasers. These materials hold potential for laser modulation of laser crystals like Ce:BaY2F8, Ce:KY3F10, and Ce:LiYLuF4, which can help address the scarcity of Q-switching materials for ultraviolet lasers.