Enhancing Gallium Nitride (GaN) Nonlinear Properties through Doping: A Promising Path for Modulation

The nonlinear characteristics of gallium nitride (GaN) offer exciting possibilities for modulation using different methods. Studies have documented how the nonlinear absorption properties of GaN crystals can be changed by introducing iron and magnesium doping. Similarly, researchers have observed changes in the defect aperture properties of GaN nanowires. Further exploration into enhancing the nonlinear properties through doping structures is of great significance and highlights the immense potential of this material.