Modulation of Nonlinear Properties in Gallium Nitride: Doping and Defect Engineering

The nonlinear properties of gallium nitride (GaN) offer significant potential for manipulation through various techniques. Researchers have demonstrated the alteration of nonlinear absorption properties in GaN crystals by introducing iron and magnesium dopants. Moreover, studies have shown that modifying defect aperture properties in GaN nanowires can also impact these nonlinear characteristics. Further exploration into enhancing nonlinear properties through strategic doping and defect engineering is highly promising. GaN's potential in this area marks it as a material of great interest for future optical technologies.