翻译摘要成英文本文针对MOS管的NBTI和HCI效应在统一的反应-扩散模型基础上对耦合失效作用下的PMOS管阈值电压退化进行仿真研究。主要研究内容和研究结果如下：。
This article focuses on the NBTI and HCI effects of MOS transistors, and conducts simulation research on threshold voltage degradation of PMOS transistors under coupling failure based on a unified reaction-diffusion model. The main research content and results are as follows:
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