sentaurus中nbti效应的sdevice建模代码

以下是Sentaurus中NBTI效应的sdevice建模代码：

# Define the material parameters for the oxide and the silicon
define mat_oxide
  permittivity = 3.9
  thickness = 10e-9
end

define mat_silicon
  permittivity = 11.7
  doping = 1e16
end

# Define the device structure
structure
  oxide thickness = mat_oxide.thickness
  silicon thickness = 50e-9
  oxide doping = 0
  silicon doping = mat_silicon.doping
end

# Define the simulation conditions
simulate
  time step = 10e-6
  total time = 1000
  temperature = 300
end

# Define the NBTI model
model nbtimodel
  # Define the parameters for the model
  define a = 1.0e-3
  define b = 1.0e-4
  define c = 1.0e-5
  define d = 1.0e-6
  
  # Define the equations for the model
  define k1 = a * exp(-b / (kb * temperature))
  define k2 = c * exp(-d / (kb * temperature))
  define k3 = 1.0e-3
  define k4 = 1.0e-4
  
  # Define the NBTI reaction
  reaction
    nbtireaction
      species O2 SiO2 H2O H Si
      reaction rate = k1 * O2 * Si - k2 * SiO2 * H2O
      reaction rate = k3 * H * SiO2 - k4 * H2O * Si
    end
  end
end

# Define the device simulation
device
  # Define the oxide and silicon materials
  material oxide = mat_oxide
  material silicon = mat_silicon
  
  # Define the NBTI model for the silicon
  model nbtimodel
    material silicon
    reaction nbtireaction
  end
  
  # Define the initial conditions for the simulation
  initial conditions
    oxide.voltage = 0
    silicon.voltage = 0
    oxide.charge = 0
    silicon.charge = 0
  end
  
  # Define the output for the simulation
  output
    oxide.voltage
    silicon.voltage
    oxide.charge
    silicon.charge
  end
end
``