翻译：再次基于收集分析的模型数据和物理参数通过Sentaurus TCAD仿真软件使用sde模块和sdevice模块分别对MOS管和失效机制进行建模仿真。对NBTI效应和HCI效应分别进行了仿真研究通过对比不同应力条件下PMOS管的转移特性曲线和阈值电压的变化确定NBTI效应与栅压和温度应力有关HCI效应与漏压应力有关。同时分析出失效机制会使MOS管的阈值电压增大且阈值电压的漂移值随时间增大。之后

Based on the collected and analyzed model data and physical parameters, the MOS transistor and failure mechanisms were modeled and simulated using the Sentaurus TCAD simulation software with the sde and sdevice modules. The NBTI and HCI effects were simulated separately, and by comparing the transfer characteristics and threshold voltage changes of PMOS transistors under different stress conditions, it was determined that the NBTI effect is related to gate voltage and temperature stress, while the HCI effect is related to leakage voltage stress. It was also found that the failure mechanism would increase the threshold voltage of the MOS transistor, and the drift value of the threshold voltage would increase over time. Subsequently, a mixed NBTI and HCI effect simulation study was conducted, and compared with the simulation of NBTI failure alone, it was found that the combination of the two effects would further exacerbate the impact on the threshold voltage of PMOS transistors and reduce the device performance