帮我把这句话翻译成英文：μ为载流子迁移率Cox为晶体管氧化层的电容密度WL为晶体管的宽度长度m为亚阈值斜率因子Vt是热电压。
"μ is the carrier mobility, Cox is the capacitance density of the transistor oxide layer, W/L is the width/length ratio of the transistor, m is the subthreshold slope factor, and Vt is the thermal voltage."
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