help me change this paragraph to english 如图Fig2 a和c所示为A-Type和B-Type Amplifier的电路结构Fig2 b和d分别为对应的传输特性曲线在A-Type Amplifier中the native MOS transistor M1 and the high threshold voltage MOS transistor are 组

The circuit structures of the A-Type and B-Type amplifiers are shown in Fig.2 (a) and (c), respectively. The corresponding transfer characteristic curves are shown in Fig.2 (b) and (d). In the A-Type Amplifier, the native MOS transistor M1 and the high threshold voltage MOS transistor form an enhancement-enhancement (EE) inverter which has a transition region with a gain less than 1. The PMOS transistor connected in series with a diode in the path acts as a load and achieves the low power design goal. Meanwhile, in the B-Type Amplifier, transistors of the same type and size ratio are connected to form a current-limiting inverter, which has the same transition region flip point as the A-Type amplifier. Due to its transition region with a gain greater than 1, it can be used as a quantization module to digitize the output voltage of the entropy source generation module.