请将下面中文翻译成英文并按照期刊格式润色：全无机CsPbBr3量子点由于其具有量子效率高、合成工艺简单以及光谱易于调控等优点已经受到社会各界的广泛关注目前主要应用于发光二极管、太阳能电池、光探测器和激光器等领域。尽管如此传统热注入法合成的CsPbBr3量子点表面配体具有不稳定性的结合态。在多步纯化清洗工艺中量子点表面不稳定的有机胺分子会发生解吸引起界面缺陷显著增加。同时在QLED器件制备时长链有机

All-inorganic CsPbBr3 quantum dots have attracted extensive attention from various fields due to their high quantum efficiency, simple synthesis process, and easy spectral tuning, and have been mainly applied in fields such as light-emitting diodes, solar cells, photodetectors, and lasers. However, the surface ligands of CsPbBr3 quantum dots synthesized by traditional hot injection method have unstable binding states. In the multi-step purification and cleaning process, the unstable organic amine molecules on the surface of quantum dots will desorb, causing a significant increase in interfacial defects. At the same time, the low conductivity of long-chain organic molecules coated quantum dot luminescent layer in QLED device preparation seriously affects the injection and transmission ability of carriers, resulting in extremely low device electrical performance. Therefore, this paper proposes to study the post-treatment modification of CsPbBr3 quantum dots with different types of short-chain molecules to effectively passivate surface defects and improve the stability of quantum dots. And use it as a luminescent layer to prepare QLED devices and optimize the device structure. The specific work summary is as follows: (1) CsPbBr3 quantum dots were prepared by hot injection method and their basic optical properties, morphology and crystal structure were characterized. It was found that the PLQY of the quantum dots after three purifications was only 27%. By introducing the dual-functional ligand DDA-SDS to passivate surface defects after treatment, without introducing excess halogen components, the luminescence efficiency was significantly improved, and a quantum yield of 100% was obtained. (2) The CsPbBr3 quantum dots were modified by GABr-DDAB hybrid ligands. The luminescence performance, surface composition, and stability of the modified CsPbBr3 quantum dots were studied by characterization tests. The PL intensity was significantly improved, and the quantum dots could still observe strong green fluorescence after 24 hours in water. QLED devices were prepared using CsPbBr3 quantum dots modified by GABr-DDAB composite ligands as the luminescent layer. At the same time, the device structure and process parameters were adjusted to optimize the device performance. The external quantum efficiency was improved from 0.98% to 10.06%, and the current efficiency was improved from 2.78 cd/A to 29.6 cd/A. (3) By spin-coating an interface modification layer of triphenylphosphine oxide (TPPO) between the hole transport layer Poly-TPD and the luminescent layer, the defects significantly increased at the interface during thermal annealing were modified, and the maximum brightness was increased from 2670 cd/m2 to 7850 cd/m2. Keywords: dual-functional ligand; bromohydrin; LED; passivation layer.