将以下段落翻译为英文：在感温电路设计中本文以双极型晶体管和亚阈值MOSFET作为感温器件采用亚阈值电路技术设计了低功耗感温电路。该电路基于亚阈值类差分结构能够产生与MOS阈值电压无关的基准电压在有效降低感温模块的功耗的同时具有较好的工艺稳定性。感温模块中亚阈值电流偏置电路采用工作在深线性区的MOS电阻取代传统电阻元件来产生纳安级偏置电流节省了芯片面积。

In the design of temperature sensing circuits, this article uses bipolar transistors and subthreshold MOSFETs as temperature sensing devices, and adopts subthreshold circuit technology to design a low-power temperature sensing circuit. Based on subthreshold pseudo-differential structure, the circuit can generate a reference voltage that is independent of MOS threshold voltage, and has good process stability while effectively reducing the power consumption of the temperature sensing module. The subthreshold current bias circuit in the temperature sensing module uses a MOS resistor operating in the deep linear region instead of traditional resistor components to generate nanoampere-level bias current, saving chip area.