将以下段落翻译为英文：该结构产生的基准电压与MOS管阈值电压无关在有效降低感温模块的功耗的同时改善了电路的工艺稳定性。
The reference voltage generated by this structure is independent of the MOS transistor threshold voltage, which effectively reduces the power consumption of the temperature sensing module and improves the process stability of the circuit.
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