将以下段落翻译为英文：在感温电路设计中本文以双极型晶体管和亚阈值MOSFET作为感温器件采用亚阈值电路设计技术基于亚阈值类差分结构设计了低功耗感温电路。该结构产生的基准电压与MOS管阈值电压无关在有效降低感温模块的功耗的同时具有较好的工艺稳定性。感温模块中亚阈值电流偏置电路采用工作在深线性区的MOS电阻取代传统电阻元件来产生纳安级偏置电流节省了芯片面积。

In the design of temperature sensing circuits, this article uses bipolar transistors and subthreshold MOSFETs as temperature sensing devices, adopts subthreshold circuit design technology, and designs a low-power temperature sensing circuit based on subthreshold differential structure. The reference voltage generated by this structure is independent of the threshold voltage of the MOSFET, and it has good process stability while effectively reducing the power consumption of the temperature sensing module. The subthreshold current bias circuit in the temperature sensing module uses MOS resistors operating in the deep linear region instead of traditional resistor elements to generate nano-ampere bias current, saving chip area.